rGO area modification impact on performance of flexible thermoelectric xGO/rxGO (x=P, N) based material.

The development of thermoelectric device engineering has begun with the exploration and innovation of the use of new materials, defect engineering, doping engineering, and material mixing experiments. In previous studies, modifications have been made to the GO/rGO thermoelectric by doping with atom S but in previous studies have not conducted research on other atomic doping and the influence of doping concentrations. In this study, graphene oxide-based thermoelectric devices were doped by phosphorus and nitrogen atoms and modifications to the width of rxGO in the xGO /rxGO pair to get different areas. xGO materials were synthesized with added ultrasonic wave technique from graphene oxide material, then deposition to polyimide substrates. The fabrication process was done to form PGO/rPGO line modification of 0.5/0.25, 0.5/0.5, 0.5/0.75 mm and NGO/rNGO line modification of 0.75/0.75, 0.75/1.00 mm for using irradiation laser technique with length wave 405 nm and power 1.5 W. The characterizations used are X-Ray Diffraction, SEM, Temperature sensor and I-V. The voltage comparisons result of modification rPGO width line dT=10K were rPGO line width 0.25 mm>0.5 mm>0.75 mm (0.201, 0.165, and 0.126 Volts) Volt, as well as the seebeck coefficients comparison result were rPGO line width 0.25 mm>0.5 mm >0.75 mm (3.33, 2.95, 2.18) x 10−4 V/K. The voltage comparisons result of modification rPGO width line dT=10K were rNGO line width 0.75 mm>1.0 mm (0.47 and 0.4) Volt, as well as the seebeck coefficients comparison result were rNGO line width 0.75 mm>1.0 mm (2.52, 2.47)×10−2 V/K. [ABSTRACT FROM AUTHOR]