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Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES).
- Source :
-
Applied Physics Letters . 5/22/2023, Vol. 122 Issue 21, p1-6. 6p. - Publication Year :
- 2023
-
Abstract
- Electron emission spectroscopy was performed on metalorganic chemical vapor deposition grown p-n−-n+ junctions with p-thicknesses ranging from 50 to 300 nm, doped with [Mg] = 3.5 × 1019 cm−3. By measuring the decreasing emitted electron intensity from a cesiated p-GaN surface with increasing p-thickness, we were able to extract the minority carrier diffusion length of electron in p-type GaN, Le = 26 ± 3 nm. The measured value is in good agreement with literature reported values. The extrapolated electron current at the n− region–p-GaN interface is in reasonable agreement with the simulated electron current at the interface. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 122
- Issue :
- 21
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 164008572
- Full Text :
- https://doi.org/10.1063/5.0150029