ZnO/silica quasi core/shell nanoparticles as electron transport materials for high-performance quantum-dot light-emitting diodes.

Quantum dot light-emitting diodes (QLEDs) are considered as the ideal candidate for next-generation displays, solid-state lighting, and optical communication applications. Although the efficiency of QLEDs has been significantly improved to the level comparable to that of organic light-emitting diodes in recent years, simultaneously achieving high efficiency and high brightness still remains challenging for QLEDs. In this work, we report a facile and effective electron-transport-layer interface control strategy of incorporating 3-aminopropyl triethoxysilane (APTES) into a ZnO nanocrystal-solution to enhance charge injection balance and suppress interfacial exciton quenching via in-situ formation of ZnO/organic silica (hereinafter referred to as ZnO/SiO 2) quasi core/shell nanoparticles in the solution, enabling red QLEDs to exhibit a maximum luminance intensity of 261,700 cd m−2, a peak external quantum efficiency (EQE) of 19.0%, and low efficiency roll-off at high luminance (an EQE up to 16.8% remained at a brightness of 200, 000 cd m−2). Our results demonstrate that substituting quasi core/shell-structured ZnO/SiO 2 nanoparticles for traditional ZnO nanocrystals as electron transport materials is a simple and effective means of fabricating QLEDs with both high efficiency and high luminance, which is expected to facilitate the development of QLED technology toward practical applications in lighting, displays and optical communication. [ABSTRACT FROM AUTHOR]