Temperature-dependent resistive switching behavior of a hybrid semiconductor-oxide planar system.

In this work, we have reported the temperature-dependent resistive switching (RS) behavior observed in (1-x)CuI.(x)La 0.7 Sr 0.3 MnO 3 nanocomposites with 0.001 < x < 0.05 within the temperature range of 150 K to 300 K. Here, we observed bipolar and interface-type RS behavior, where the resistance can be altered to its previous state by the application of an opposite bias voltage. The extensive analysis of the current versus voltage data for different compositions at room temperature revealed that the dominating transport mechanisms in the low and high bias regions, respectively, were Schottky emission and Poole–Frenkel effect. The enhanced switching response of the RS medium after the addition of La 0.7 Sr 0.3 MnO 3 can be attributed to the oxygen vacancy-induced conduction which was confirmed by X Ray Photoelectron Spectroscopy (XPS) measurements. In the endurance test, the highest ON/OFF ratio averaged over 100 cycles was observed to be 4.2 ± 1.1 and 3.8 ± 0.3 for x = 0.001 and 0.02 respectively at T = 300K. At T = 250 K, we obtained the optimal ON/OFF ratio of 19.8 ± 1.8 for x = 0.001 and 22.7 ± 4.1 for x = 0.02. The investigation of current versus voltage graphs for T = 250 K, 200 K, and 150 K further confirmed Schottky emission and the Poole–Frenkel effect as the dominating transport mechanisms at lower temperatures. [ABSTRACT FROM AUTHOR]