Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces.

MLA

Ceponis, Tomas, et al. “Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces.” Materials (1996-1944), vol. 16, no. 9, May 2023, p. 3424. EBSCOhost, https://doi.org/10.3390/ma16093424.

APA

Ceponis, T., Pavlov, J., Kadys, A., Vaitkevicius, A., & Gaubas, E. (2023). Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces. Materials (1996-1944), 16(9), 3424. https://doi.org/10.3390/ma16093424

Chicago

Ceponis, Tomas, Jevgenij Pavlov, Arunas Kadys, Augustas Vaitkevicius, and Eugenijus Gaubas. 2023. “Luminescence Characteristics of the MOCVD GaN Structures with Chemically Etched Surfaces.” Materials (1996-1944) 16 (9): 3424. doi:10.3390/ma16093424.