Cite
Study on inhibition effect of 3-amino-1, 2, 4-triazole on chemical mechanical polishing of GLSI low-techology node molybdenum barrier layer.
MLA
Wu, Pengfei, et al. “Study on Inhibition Effect of 3-Amino-1, 2, 4-Triazole on Chemical Mechanical Polishing of GLSI Low-Techology Node Molybdenum Barrier Layer.” Materials Science in Semiconductor Processing, vol. 162, Aug. 2023, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.mssp.2023.107474.
APA
Wu, P., Zhang, B., Li, H., Wang, Y., Xie, M., Li, Y., & Wang, W. (2023). Study on inhibition effect of 3-amino-1, 2, 4-triazole on chemical mechanical polishing of GLSI low-techology node molybdenum barrier layer. Materials Science in Semiconductor Processing, 162, N.PAG. https://doi.org/10.1016/j.mssp.2023.107474
Chicago
Wu, Pengfei, Baoguo Zhang, Haoran Li, Ye Wang, Mengchen Xie, Ye Li, and Wantang Wang. 2023. “Study on Inhibition Effect of 3-Amino-1, 2, 4-Triazole on Chemical Mechanical Polishing of GLSI Low-Techology Node Molybdenum Barrier Layer.” Materials Science in Semiconductor Processing 162 (August): N.PAG. doi:10.1016/j.mssp.2023.107474.