Simulation and comparison of current-voltage characteristics of advanced MESFET by varying channel materials (Si, Ge, GaAs) and comparing it with single gate MOSFET to optimize conductivity.

In order to replicate the current and voltage characteristics of MESFET and single-gate MOSFET, several channel materials will be used (Si, Ge, GaAs). The following are the materials and procedures used: In the NANOHUB tool simulation environment, the electrical conductance of 360 MESFET (Si, Ge, and GaAs) and 120 MOSFET samples was assessed. Results: The conductance of Ge-MESFET is much larger than that of MOSFET (P0.05) (4111.602*10-6 mho). Conclusion: Ge-MESFET has a higher conductivity than MOSFET within the scope of this research. [ABSTRACT FROM AUTHOR]