Spectrometric performance of 4H-SiC detectors after neutron irradiation.

In this work the radiation hardness of 4H-SiC detectors based on epitaxial layer were studied. In the experiment two thicknesses of the epitaxial layer 25 and 50 µm were used. Structures with Ni/Au Schottky contact of 3 mm diameter were prepared in a high vacuum apparatus. At first the spectrometric performance was tested using α-particle 226Ra radiation source. Detectors demonstrate high resolution α-particle spectroscopy. Following detectors were divided into three groups and each was irradiated with different fluencies of neutrons up to 3.4×1015 cm-2. We observed the charge collection efficiency decreasing with a neutron fluence increasing. [ABSTRACT FROM AUTHOR]