Back to Search
Start Over
Enhanced high-temperature stability of indium tin oxide - Indium oxide thermocouples by two-step annealing.
- Source :
-
Thin Solid Films . May2023, Vol. 773, pN.PAG-N.PAG. 1p. - Publication Year :
- 2023
-
Abstract
- • The microstructure and electrical conductivity of In 2 O 3 and indium tin oxide (ITO) films were characterized. • The high temperature stability of In 2 O 3 -ITO thermocouples is improved. • Small temperature drift rate holding at 1300 °C more than 7 h. The complex internal structure of the aero-engine and the high-temperature, high-pressure, and high-speed airflow make it difficult to measure the internal temperature. Indium tin oxide (ITO) and In 2 O 3 films have been studied for their application in high-temperature thermocouples and strain gauges. Due to their large Seebeck coefficient and high-temperature stability, ceramic thin-film thermocouples are expected to be used at high-temperature measure. In this paper, ITO-In 2 O 3 thermocouples were fabricated by magnetron sputtering. Besides, the electrical properties of the air-annealed and two-step nitrogen-annealed thermocouples were compared, including the repeatability of thermoelectric response after multiple thermal cycles and the drift rate during the high-temperature duration. The microstructure and electrical conductivity of both the as-deposited and post-annealed ceramic thin films were tested respectively. The result shows that the resitivity and Seebeck coefficient of the thin films annealed in nitrogen is reduced, but the stability at high temperature is greatly improved. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 773
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 163260270
- Full Text :
- https://doi.org/10.1016/j.tsf.2023.139780