聚乙烯咔唑共价修饰黑磷纳米片及其在叠层阻变存储器中的应用.

One of the most effective methods for improving the storage density of resistive random access memories (RRAMs) is to fabricate 3D vertical stacking devices. By using BP-DDAT(DDAT: S-1-dodecyl-S ′-(α,α′-dimethyl-α′ ′- aceticacid)trithiocarbonate) as a key 2D template and reversible addition-fragmentation chain transfer (RAFT) reagent, a novel poly(N-vinylcarbazole) covalently functionalized black phosphorus derivative (BP-PVK) is successfully synthesized and well-characterized by infrared spectroscopy, X-ray electron spectroscopy and UV-Vis absorption spectroscopy. The environmental stability and solubility of BP nanosheets are greatly improved. Using BP-PVK as active layer, a double-layer vertically stacked RRAM memory device (17×17 stripe array) with a configuration of Al/BP-PVK/Al/BP-PVK/Al is fabricated. The as-fabricated device shows good bistable electrical switching and non-volatile rewritable performance at room temperature, with an ON/OFF current ratio exceeding 10³, higher production yield of the memory devices and structural uniformity. [ABSTRACT FROM AUTHOR]