Cite
Atomic layer deposition of hafnium oxide on porous silicon to form a template for athermal SERS-active substrates.
MLA
Girel, K., et al. “Atomic Layer Deposition of Hafnium Oxide on Porous Silicon to Form a Template for Athermal SERS-Active Substrates.” Applied Physics A: Materials Science & Processing, vol. 129, no. 4, Apr. 2023, pp. 1–9. EBSCOhost, https://doi.org/10.1007/s00339-023-06592-3.
APA
Girel, K., Burko, A., Zavatski, S., Barysiuk, A., Litvinova, K., Eganova, E., Tarasov, A., Novikov, D., Dubkov, S., & Bandarenka, H. (2023). Atomic layer deposition of hafnium oxide on porous silicon to form a template for athermal SERS-active substrates. Applied Physics A: Materials Science & Processing, 129(4), 1–9. https://doi.org/10.1007/s00339-023-06592-3
Chicago
Girel, K., A. Burko, S. Zavatski, A. Barysiuk, K. Litvinova, E. Eganova, A. Tarasov, D. Novikov, S. Dubkov, and H. Bandarenka. 2023. “Atomic Layer Deposition of Hafnium Oxide on Porous Silicon to Form a Template for Athermal SERS-Active Substrates.” Applied Physics A: Materials Science & Processing 129 (4): 1–9. doi:10.1007/s00339-023-06592-3.