Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy.

MLA

Dinh, Duc V., et al. “Lattice Parameters of ScxAl1−xN Layers Grown on GaN(0001) by Plasma-Assisted Molecular Beam Epitaxy.” Applied Physics Letters, vol. 122, no. 15, Apr. 2023, pp. 1–6. EBSCOhost, https://doi.org/10.1063/5.0137873.

APA

Dinh, D. V., Lähnemann, J., Geelhaar, L., & Brandt, O. (2023). Lattice parameters of ScxAl1−xN layers grown on GaN(0001) by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 122(15), 1–6. https://doi.org/10.1063/5.0137873

Chicago

Dinh, Duc V., Jonas Lähnemann, Lutz Geelhaar, and Oliver Brandt. 2023. “Lattice Parameters of ScxAl1−xN Layers Grown on GaN(0001) by Plasma-Assisted Molecular Beam Epitaxy.” Applied Physics Letters 122 (15): 1–6. doi:10.1063/5.0137873.