Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/αTiO x /Al Resistive Random Access Memory Devices.

MLA

Lee, Jung-Kyu, et al. “Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/ΑTiO x /Al Resistive Random Access Memory Devices.” Materials (1996-1944), vol. 16, no. 6, Mar. 2023, p. 2317. EBSCOhost, https://doi.org/10.3390/ma16062317.

APA

Lee, J.-K., Pyo, J., & Kim, S. (2023). Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/αTiO x /Al Resistive Random Access Memory Devices. Materials (1996-1944), 16(6), 2317. https://doi.org/10.3390/ma16062317

Chicago

Lee, Jung-Kyu, Juyeong Pyo, and Sungjun Kim. 2023. “Low-Frequency Noise-Based Mechanism Analysis of Endurance Degradation in Al/ΑTiO x /Al Resistive Random Access Memory Devices.” Materials (1996-1944) 16 (6): 2317. doi:10.3390/ma16062317.