How to Determine the Fano Factor in a Semiconductor Material from Experimental Data?

Nowadays, there are formulas in the literature for determining the Fano factor in a semiconductor material from experimental data. However, the existing formulas do not take into account the contribution of fluctuations of the induced charge on the detector electrodes due to the capture of electrons and holes by traps, as well as the contribution of the induced charge fluctuations due to the distribution function of generation of the electron-hole pairs in the volume of the semiconductor detector. In this work, a formula for the energy resolution of a semiconductor detector was obtained, which allows to determine the contributions of various processes to the energy resolution and their dependence on the properties of the semiconductor material of the detector and the characteristics of the detected particle. The obtained formula for the energy resolution of a semiconductor detector allows to formulate the conditions under which it is possible to obtain information on the Fano factor and fluctuations of the induced charge on the detector electrodes due to the capture of electrons and holes by traps, and the distribution function of generation of electron-hole pairs in its volume from the characteristics of the output signal. As an example, the Fano factor in CdTe semiconductor material has been determined from experimental data. [ABSTRACT FROM AUTHOR]