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A short high-gain waveguide amplifier based on low concentration erbium-doped thin-film lithium niobate on insulator.
- Source :
-
Applied Physics Letters . 3/20/2023, Vol. 122 Issue 12, p1-7. 7p. - Publication Year :
- 2023
-
Abstract
- One hotspot of integrated optics is how to realize a highly integrated and high-gain on-chip amplification system in a thin film of lithium niobate on insulator (TFLNOI). Here, a low erbium-doped TFLNOI waveguide amplifier with shorter length is demonstrated using the photolithography-assisted oblique-reactive ion etching technique. A maximum net internal gain of 5.4 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1531.35 nm for a waveguide length of 1.5 mm and an erbium-doped concentration of 0.1 mol. %, indicating a gain per unit length of 36 dB cm−1. This work paves the way for the monolithic integration of diverse active and passive photonic components on the TFLNOI platform. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 122
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 162676006
- Full Text :
- https://doi.org/10.1063/5.0137678