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Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN.

Authors :
Miller, J. D.
Trodahl, H. J.
Al Khalfioui, M.
Vézian, S.
Ruck, B. J.
Source :
Applied Physics Letters. 2/27/2023, Vol. 122 Issue 9, p1-5. 5p.
Publication Year :
2023

Abstract

A unique bulk-origin perpendicular magnetic anisotropy (PMA) is reported in thin films of the cubic ferromagnetic semiconductor GdxSm1−xN. PMA behavior is clearly signaled by in-vs-out-of-plane magnetic hysteresis showing out-of-plane remanence of ∼ 80 % of the saturation magnetization in films with up to 30% Gd. Anomalous Hall effect data show further that the conduction-band spin imbalance shows complete 100% remanence to retain half-metallic conduction even as the out-of-plane applied field is reduced to zero, in stark contrast to the 80% magnetization remanence. The unusual occurrence of PMA in this cubic material is discussed as stabilized by a mix of two in-plane crystal orientations in the epitaxial (111)-oriented films. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
122
Issue :
9
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
162581579
Full Text :
https://doi.org/10.1063/5.0131472