Correction: The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms.

Moreover, at the end of third paragraph in "4.1 SiN-embedded Ge-QD microdisk light emitters", unnecessary "Ge QD SiN silicon oxide air" has been remained. Thanks to the high absorption coefficients and pseudo-direct band-gap properties of Ge near the C-band communication wavelengths, active photonic devices (light sources and photodetectors) in Si PICs are enabled [2, 3] with small form factors on 2-D silicon-on-insulator (SOI) platforms. [Extracted from the article]