Growth and thermal properties of InSe crystal by using the ground simulation apparatus of China space station.

• Large-sized InSe single crystal. • The ground simulation apparatus of China space station. • γ-Phase with space group of standard R 3 m. • A positive thermal expansion at 30–500 °C. • No element volatilization even the temperature as high as 1000 °C. Indium selenide (InSe) semiconductor crystal was grown by using the ground simulation apparatus of China space station in this work. The furnace was controlled at 715 °C and the temperature gradient for crystal growth was ∼30 °C/cm. The as-grown InSe crystalizes in γ-phase with space group of R 3 m. The average etching pits density (EPD) is estimated to be about 104/cm2. Thermal analysis indicates a positive thermal expansion at 30–500 °C and no volatilization occurred even as high as 1000 °C. This work not only establishes a reliable process for preparing large-sized InSe single crystal but also creates a foundation for further work in outer space in the future. [ABSTRACT FROM AUTHOR]