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Effects of nitrogen doping and oxygen vacancies on thermoelectric properties of Pt/N-doped ITO thin film thermocouples: first-principles calculations and experiments.
- Source :
-
Journal of Materials Science . Feb2023, Vol. 58 Issue 7, p3219-3230. 12p. 4 Diagrams, 4 Charts, 5 Graphs. - Publication Year :
- 2023
-
Abstract
- In this paper, the effects of nitrogen doping and oxygen vacancies on thermoelectric properties of Pt/N-doped ITO thin film thermocouples were discussed in detail from the perspective of thermodynamics and kinetics based on first-principles and experiments. The atomic structure and bonding characteristics of ITO and N-doped ITO were investigated by X-ray diffraction and X-ray photoelectron spectroscopy. The calculation results show that nitrogen doping makes the charge transfer to the Sn-N bond and produces anti-bonding states to the nearest neighbor Sn–O bond, so that the repair of oxygen vacancies in N-doped ITO requires a higher activation energy than ITO. The effects of band structure, carrier concentration and carrier effective mass on the Seebeck coefficients of ITO and N-doped ITO were further discussed in detail. Finally, Pt/ITO and Pt/N-doped ITO thin film thermocouples were fabricated on the Al2O3 substrates by magnetron sputtering to verify their thermoelectric stability. The calibration results also proved that N-doped ITO has higher thermoelectric stability than ITO. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00222461
- Volume :
- 58
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Journal of Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 161854757
- Full Text :
- https://doi.org/10.1007/s10853-023-08236-6