电化学沉积制备Bi2Se3 薄膜及其光电性能研究.

As exotic states of quantum matter, topological insulators have been widely used in the field of next-generation electronic and optoelectronic devices. Due to the co-existence of metal surface states and a narrow gap of 0.3 eV, ultrafast charge transport capability and infrared light absorption capability are both observed in Bi2Se3, making it a research hotpot for new optoelectronic devices. In this paper, Bi2Se3 thin films were electrochemically deposited on ITO substrates in an acidic electrolyte solution by the potentiostat deposition method. The growth conditions of Bi2Se3 thin films were determined by the control variable method as pH 0.2-0.8, deposition potential-0.15 V vs. Ag/AgCl, and deposition time 1 h. Meanwhile, the structure and morphology of Bi2Se3 thin films were studied by field emission transmission electron microscopy, X-ray diffractometer, and other characterization techniques. Finally, the photoresponse characteristic of Bi2Se3 thin films was studied, and the influence of the annealing process on its photoelectric characteristic was investigated. The test results show that the annealed Bi2Se3 thin film has good photoelectric performance in the near-infrared band. The responsivity and specific detectivity are about 6.3×10-5 A/W and 2.9×106 cmHz0.5/W, respectively. [ABSTRACT FROM AUTHOR]