Reduction of leakage current and large enhancement of ferroelectric properties in Sb doped Bi4Ti3O12 ferroelectric thin film with Sb doped Bi2Ti2O7 as buffer layer.

MLA

Wang, Zan, et al. “Reduction of Leakage Current and Large Enhancement of Ferroelectric Properties in Sb Doped Bi4Ti3O12 Ferroelectric Thin Film with Sb Doped Bi2Ti2O7 as Buffer Layer.” Ferroelectrics, vol. 602, no. 1, Jan. 2023, pp. 71–83. EBSCOhost, https://doi.org/10.1080/00150193.2022.2149303.

APA

Wang, Z., Xu, M., Zhang, D., Wang, L., & Zhang, W. (2023). Reduction of leakage current and large enhancement of ferroelectric properties in Sb doped Bi4Ti3O12 ferroelectric thin film with Sb doped Bi2Ti2O7 as buffer layer. Ferroelectrics, 602(1), 71–83. https://doi.org/10.1080/00150193.2022.2149303

Chicago

Wang, Zan, Man Xu, Dan Zhang, Lei Wang, and Wen-zheng Zhang. 2023. “Reduction of Leakage Current and Large Enhancement of Ferroelectric Properties in Sb Doped Bi4Ti3O12 Ferroelectric Thin Film with Sb Doped Bi2Ti2O7 as Buffer Layer.” Ferroelectrics 602 (1): 71–83. doi:10.1080/00150193.2022.2149303.