50～250keV质子入射SiC和Si靶时的电子发射特性研究.

The electron emission yields from silicon carbide ceramics and silicon surfaces induced by protons in the energy range of 50～250 keV were measured on the 320 kV electron cyclotron resonance ion source(ECRIS) platform of the Institute of Modern Physics, Chinese Academy of Science(IMP, CAS) in Lanzhou. The experimental results show that the variation trend of electron emission yield with proton incident energy of the two kinds of semiconductor targets is similar to the variation trend of electronic energy loss with proton incident energy during the action process. By analyzing the energy source of electron emission, it is found that the electron emission is mainly contributed by the kinetic electron emission, and the potential electron emission can be ignored. The electron emission yield of the two targets is approximately proportional to the electronic energy loss in the process of proton incident on the target, and the proportionality coefficient B varies slightly with the incident energy. The results will provide important reference data for the study of electron emission in the process of ion and semiconductor target interaction and the characteristics of new semiconductor materials. [ABSTRACT FROM AUTHOR]