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Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework.

Authors :
Skorupskii, Grigorii
Chanteux, Géraldine
Le, Khoa N.
Stassen, Ivo
Hendon, Christopher H.
Dincă, Mircea
Source :
Annals of the New York Academy of Sciences. Dec2022, Vol. 1518 Issue 1, p226-230. 5p. 1 Diagram, 4 Graphs.
Publication Year :
2022

Abstract

Metal–organic frameworks (MOFs) are hybrid materials known for their nanoscale pores, which give them high surface areas but generally lead to poor electrical conductivity. Recently, MOFs with high electrical conductivity were established as promising materials for a variety of applications in energy storage and catalysis. Many recent reports investigating the fundamentals of charge transport in these materials focus on the role of the organic ligands. Less consideration, however, is given to the metal ion forming the MOF, which is almost exclusively a late first‐row transition metal. Here, we report a moderately conductive porous MOF based on trivalent gallium and 2,3,6,7,10,11‐hexahydroxytriphenylene. Gallium, a metal that has not been featured in electrically conductive MOFs so far, has a closed‐shell electronic configuration and is present in its trivalent state—in contrast to most conductive MOFs, which are formed by open‐shell, divalent transition metals. Our material, made without using any harmful solvents, displays conductivities on the level of 3 mS/cm and a surface area of 196 m2/g, comparable to transition metal analogs. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00778923
Volume :
1518
Issue :
1
Database :
Academic Search Index
Journal :
Annals of the New York Academy of Sciences
Publication Type :
Academic Journal
Accession number :
160786171
Full Text :
https://doi.org/10.1111/nyas.14906