Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance.

MLA

Jiang, Yang, et al. “Microscopic Formation Mechanism of Si/Tl5Al1/TiN Ohmic Contact on Non-Recessed i-InAlN/GaN Heterostructures with Ultra-Low Resistance.” Applied Physics Letters, vol. 121, no. 21, Nov. 2022, pp. 1–8. EBSCOhost, https://doi.org/10.1063/5.0117205.

APA

Jiang, Y., Du, F., He, J., Qiao, Z., Tang, C., Tang, X., Wang, Z., Wang, Q., & Yu, H. (2022). Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance. Applied Physics Letters, 121(21), 1–8. https://doi.org/10.1063/5.0117205

Chicago

Jiang, Yang, FangZhou Du, JiaQi He, ZePeng Qiao, ChuYing Tang, XinYi Tang, ZhongRui Wang, Qing Wang, and HongYu Yu. 2022. “Microscopic Formation Mechanism of Si/Tl5Al1/TiN Ohmic Contact on Non-Recessed i-InAlN/GaN Heterostructures with Ultra-Low Resistance.” Applied Physics Letters 121 (21): 1–8. doi:10.1063/5.0117205.