TCAD evaluation of single-event burnout hardening design for SiC Schottky diodes.

MLA

Chen, Jia-Hao, et al. “TCAD Evaluation of Single-Event Burnout Hardening Design for SiC Schottky Diodes.” Microelectronics Reliability, vol. 139, Dec. 2022, p. N.PAG. EBSCOhost, https://doi.org/10.1016/j.microrel.2022.114865.

APA

Chen, J.-H., Wang, Y., Guo, H., Fei, X.-X., Yu, C., & Bao, M.-T. (2022). TCAD evaluation of single-event burnout hardening design for SiC Schottky diodes. Microelectronics Reliability, 139, N.PAG. https://doi.org/10.1016/j.microrel.2022.114865

Chicago

Chen, Jia-Hao, Ying Wang, Hao-min Guo, Xin-Xing Fei, Cheng-hao Yu, and Meng-Tian Bao. 2022. “TCAD Evaluation of Single-Event Burnout Hardening Design for SiC Schottky Diodes.” Microelectronics Reliability 139 (December): N.PAG. doi:10.1016/j.microrel.2022.114865.