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Monolithic GaN optoelectronic system on a Si substrate.
- Source :
-
Applied Physics Letters . 10/31/2022, Vol. 121 Issue 18, p1-6. 6p. - Publication Year :
- 2022
-
Abstract
- GaN-based devices have grown rapidly in recent decades, due to their important research value and application prospects. There is a desire to monolithically integrate different GaN devices into a single chip for the development of future optoelectronic systems with low power consumption. In addition to improved multifunctional performance, a miniature integrated system can result in a significant reduction in material costs, processing costs, and packaging costs. In view of such prospects, we propose monolithic, top-down approaches to build III-nitride transmitter, modulator, waveguide, beam splitter, receiver, and monitor as a single unit onto a conventional GaN-on-silicon wafer without involving regrowth or postgrowth doping. Data communication among these components is realized through light propagation, opening up horizons for GaN optoelectronic systems on a chip. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 121
- Issue :
- 18
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 160042699
- Full Text :
- https://doi.org/10.1063/5.0125324