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Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants.
- Source :
-
Microelectronics Reliability . Nov2022, Vol. 138, pN.PAG-N.PAG. 1p. - Publication Year :
- 2022
-
Abstract
- In this work, the relaxation analysis is performed to understand the V TH instability in FeFETs with two different dopants, i.e., Si and Gd. The FeFETs with different dopants show the different delay-after-write characteristics, i.e., Gd:HfO 2 FeFETs show a better delay-after-write stability compared to the case of Si:HfO 2 FeFETs. With the relaxation analysis, Si:HfO 2 FeFETs exhibit an obvious V TH recovery during the relaxation phases. Furthermore, the power law fitting is used to analyze the V TH shift under the positive program bias, indicating that a wide and easily accessible defects can exist in the IL and/or Si:HfO 2 since the smaller overdrive voltage dependence exponent (γ) is obtained in Si:HfO 2. Last, the smaller V TH shift/recovery in Gd:HfO 2 FeFETs can be attributed to a relatively tighter defect distribution, indicating that the dopants in the ferroelectric layer and the defects in IL and/or ferroelectric dielectric have to be carefully optimized to achieve the better V TH stability. • Si:HfO 2 FeFETs exhibit an obvious V TH recovery during the relaxation phases. • The power law fitting is used to analyze the V TH shift, indicating that a wide and easily accessible defects can exist in the IL and/or Si:HfO 2. • The smaller V TH shift/recovery in Gd:HfO 2 FeFETs indicates that the dopants and the defects have to be carefully optimized to achieve the better V TH stability. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 138
- Database :
- Academic Search Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Academic Journal
- Accession number :
- 159979508
- Full Text :
- https://doi.org/10.1016/j.microrel.2022.114680