Structural, electronic, and thermal properties of hydrogenated silicon carbide with thermal heat transfer application in nanoscale metal oxide semiconductor field-effect transistor.

• Structural electronic and thermal properties of Hydrogenated silicon carbide (6H-SiC). • The transfer characteristics of SiO2/6H-SiC MOSFET transistors were calculated. • Evaluation of heat transfer conduction using the single-phase-lag model. • The temporal distribution of temperature at different moments of time. In this paper, studies of thestructural electronic and thermal properties of hydrogenated silicon carbide (6H-SiC) have been carried out applying first-principles calculations based on the linearized augmented plane wave method. A two-dimensional numerical model is proposed for 6H-SiC Metal oxide semiconductor field-effect transistor (MOSFET) to investigate the heat transfer on the transistor characteristics using a commercial software application. Structural and electronic results show 6H-SiC lattice parameters (a) and (c) of 3.0817Å and 15.1179Å respectively and an indirect band gap about 2.015 eV. The thermodynamic calculations show that the heat capacity of 6H-SiC is stable at higher temperature. Moreover, the single-phase-lag heat conduction model is used to calculate the temporal temperature distribution in centerline of 6H-SiC MOSFET. The temperature values obtained are 300K-360K at time 7 ps and 12 ps respectively. [ABSTRACT FROM AUTHOR]