Back to Search
Start Over
Coherently strained (001) β-(AlxGa1−x)2O3 thin films on β-Ga2O3: Growth and compositional analysis.
- Source :
-
Journal of Applied Physics . 9/21/2022, Vol. 132 Issue 11, p1-8. 8p. - Publication Year :
- 2022
-
Abstract
- In this work, we report on the growth of (001) β-(AlxGa1−x)2O3 films in molecular beam epitaxy via metal oxide-catalyzed epitaxy. Films with Al contents up to 15% were grown and the Al content was measured with atom probe tomography. A relationship between the Al content and the out-of-plane lattice parameter was derived for both (001) and (100) orientations. Transmission electron microscopy showed no evidence of extended defects in (001) β-(AlxGa1−x)2O3, and reciprocal space maps confirmed that β-(AlxGa1−x)2O3 films were coherently strained to (001) β-Ga2O3. Sn was also demonstrated to act as a surfactant for (001) β-(AlxGa1−x)2O3 growth, allowing for high-quality, uniform films with smooth morphologies. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 132
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 159237937
- Full Text :
- https://doi.org/10.1063/5.0104010