Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of Atoms.

The temperature dependences of the longitudinal resistance and heat capacity of silicon-carbide epitaxial films grown on single-crystal silicon substrates by the method of ghe coordinated substitution of atoms are investigated. The features in the behavior of these dependences are found at temperatures of 56, 76, 122, and 130°C. The observed features of the behavior of the heat capacity and longitudinal resistance taking into account the appearance of a giant value of diamagnetism previously discovered in samples at these temperatures are interpreted as the phase transitions of charge carriers into a coherent (possibly superconducting if we take into account diamagnetism) state. [ABSTRACT FROM AUTHOR]