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AC-Stress Degradation and Its Anneal in SiC MOSFETs.
- Source :
-
IEEE Transactions on Electron Devices . Sep2022, Vol. 69 Issue 9, p5068-5073. 6p. - Publication Year :
- 2022
-
Abstract
- Several important aspects related to the phenomena of ac gate-bias stress-induced threshold-voltage degradation in SiC MOSFETs are presented. These include a detailed investigation of the particular sensitivity of trench-geometry devices when exposed to a negative gate-bias overstress, the specific conditions that drive this degradation, and its recovery by the application of a dc negative bias temperature stress. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 69
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 159195058
- Full Text :
- https://doi.org/10.1109/TED.2022.3190815