Back to Search Start Over

Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors.

Authors :
Jiang, Yu-Sen
Huang, Kuei-Wen
Yi, Sheng-Han
Wang, Chin-I
Chang, Teng-Jan
Kao, Wei-Chung
Wang, Chun-Yuan
Yin, Yu-Tung
Shieh, Jay
Chen, Miin-Jang
Source :
Journal of the European Ceramic Society. Dec2022, Vol. 42 Issue 15, p6997-7003. 7p.
Publication Year :
2022

Abstract

Enhanced ferroelectric properties of nanoscale ZrO 2 thin films by an HfO 2 seed layer are demonstrated in metal-ferroelectric-semiconductor (Si) capacitors and transistors prepared with a low thermal budget of 400 °C. The seeding effect of the HfO 2 layer leads to the enhancement of crystallization into the orthorhombic phase and the increase of remnant polarization of the sub-10 nm ZrO 2 /HfO 2 bilayer structure. The ferroelectric field-effect transistor with the ZrO 2 /HfO 2 bilayer gate stack reveals a large memory window of ~1.2 V and a steep subthreshold swing below 60 mV/decade. As compared with the Hf 0.5 Zr 0.5 O 2 thin film, superior ferroelectric properties of the ZrO 2 /HfO 2 bilayer structure show great potential for ferroelectric memory devices fabricated on Si substrates. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09552219
Volume :
42
Issue :
15
Database :
Academic Search Index
Journal :
Journal of the European Ceramic Society
Publication Type :
Academic Journal
Accession number :
159189477
Full Text :
https://doi.org/10.1016/j.jeurceramsoc.2022.07.031