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Ferroelectric ZrO2 ultrathin films on silicon for metal-ferroelectric-semiconductor capacitors and transistors.
- Source :
-
Journal of the European Ceramic Society . Dec2022, Vol. 42 Issue 15, p6997-7003. 7p. - Publication Year :
- 2022
-
Abstract
- Enhanced ferroelectric properties of nanoscale ZrO 2 thin films by an HfO 2 seed layer are demonstrated in metal-ferroelectric-semiconductor (Si) capacitors and transistors prepared with a low thermal budget of 400 °C. The seeding effect of the HfO 2 layer leads to the enhancement of crystallization into the orthorhombic phase and the increase of remnant polarization of the sub-10 nm ZrO 2 /HfO 2 bilayer structure. The ferroelectric field-effect transistor with the ZrO 2 /HfO 2 bilayer gate stack reveals a large memory window of ~1.2 V and a steep subthreshold swing below 60 mV/decade. As compared with the Hf 0.5 Zr 0.5 O 2 thin film, superior ferroelectric properties of the ZrO 2 /HfO 2 bilayer structure show great potential for ferroelectric memory devices fabricated on Si substrates. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09552219
- Volume :
- 42
- Issue :
- 15
- Database :
- Academic Search Index
- Journal :
- Journal of the European Ceramic Society
- Publication Type :
- Academic Journal
- Accession number :
- 159189477
- Full Text :
- https://doi.org/10.1016/j.jeurceramsoc.2022.07.031