Study of the Effect of Self-Heating in High-Voltage SOI Transistors with a Large Drift Region.

The results of studying the contribution of the self-heating mechanism to the CVCs of high-power LDMOS (laterally diffused metal oxide semiconductor) transistors made according to the silicon-on-insulator technology with a long drift region with topological norms of 0.5 microns at high control voltages are discussed. It is shown that the action of this mechanism significantly changes the CVC of n- and p-type transistors. Differences in the influence of the self-heating mechanism on the characteristics of transistors of the n- and p-type are determined. The results obtained also open up new opportunities for improving the characteristics of microcircuits during their development and methods for further improvement of the LDMOS technology. [ABSTRACT FROM AUTHOR]