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Devitalizing noise-driven instability of entangling logic in silicon devices with bias controls.
- Source :
-
Scientific Reports . 9/7/2022, Vol. 12 Issue 1, p1-11. 11p. - Publication Year :
- 2022
-
Abstract
- The quality of quantum bits (qubits) in silicon is highly vulnerable to charge noise that is omnipresent in semiconductor devices and is in principle hard to be suppressed. For a realistically sized quantum dot system based on a silicon-germanium heterostructure whose confinement is manipulated with electrical biases imposed on top electrodes, we computationally explore the noise-robustness of 2-qubit entangling operations with a focus on the controlled-X (CNOT) logic that is essential for designs of gate-based universal quantum logic circuits. With device simulations based on the physics of bulk semiconductors augmented with electronic structure calculations, we not only quantify the degradation in fidelity of single-step CNOT operations with respect to the strength of charge noise, but also discuss a strategy of device engineering that can significantly enhance noise-robustness of CNOT operations with almost no sacrifice of speed compared to the single-step case. Details of device designs and controls that this work presents can establish practical guideline for potential efforts to secure silicon-based quantum processors using an electrode-driven quantum dot platform. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20452322
- Volume :
- 12
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Scientific Reports
- Publication Type :
- Academic Journal
- Accession number :
- 158960372
- Full Text :
- https://doi.org/10.1038/s41598-022-19404-0