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Isovalent Bi substitution induced low thermal conductivity and high thermoelectric performance in n-type InSb.
- Source :
-
Ceramics International . Oct2022:Part B, Vol. 48 Issue 19, p29284-29290. 7p. - Publication Year :
- 2022
-
Abstract
- In this paper, thermoelectric (TE) properties of n- type InSb 1-x Bi x (x = 0.00, 0.02, 0.05 and 0.10) polycrystalline samples, synthesized by single-step vacuum melting reaction, have been studied in the temperature range of 300–623 K. P-XRD confirms the phase purity and preferred orientation of (220) plane. FE-SEM back-scattered electron (BSE) micrographs reveal surface morphology and phase homogeneity, and elemental mapping with EDS is used to identify the chemical composition. The elemental existence and oxidation state of In3+, Sb3+, and Bi3+ in InSb 1-x Bi x are rechecked through XPS analysis. With Bi substitution, the electrical conductivity of InSb increases, whereas Seebeck coefficient starts decreasing. However, the maximum Seebeck coefficient, S of −241 μV/K at 423 K, was achieved for the composition of InSb 0.98 Bi 0.02. Interestingly, a huge reduction in lattice thermal conductivity, κ lattice from ∼17.5 W/mK (InSb) to 13.1 W/mK (InSb 0.9 Bi 0.10) at 300 K is observed due to increased phonon scattering from mass-fluctuation and created point defects. Further, the maximum thermoelectric figure of merit, zT was achieved as ∼0.56 at 623 K with higher Vickers micro-hardness values of ∼140 H V for the composition of InSb 0.98 Bi 0.02 which is notably higher than the recently reported InSb based materials. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02728842
- Volume :
- 48
- Issue :
- 19
- Database :
- Academic Search Index
- Journal :
- Ceramics International
- Publication Type :
- Academic Journal
- Accession number :
- 158608707
- Full Text :
- https://doi.org/10.1016/j.ceramint.2022.05.282