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Temperature-Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs.
- Source :
-
IEEE Transactions on Electron Devices . Aug2022, Vol. 69 Issue 8, p4138-4143. 6p. - Publication Year :
- 2022
-
Abstract
- Narrow-channel accumulated body nMOSFET devices with p-type side gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate biasing (${V}_{\text {side}}$). The subthreshold slope (SS) and drain induced barrier lowering (DIBL) decrease and threshold voltage (${V}_{t}$) increases linearly with reduced temperature and reduced side-gate bias. Detailed analysis on a 27 nm $\times $ 78 nm (width $\times $ length) device shows SS decreasing from 115 mV/dec at 400 K to 90 mV/dec at 300 K and down to 36 mV/dec at 100 K, DIBL decreasing by approximately 10 mV/V for each 100 K reduction in operating temperature, and ${V}_{t}$ increasing from 0.42 to 0.61 V as the temperature is reduced from 400 to 100 K. ${V}_{t}$ can be adjusted from ~0.3 to ~1.1 V with ~0.3 V/V sensitivity by depletion or accumulation of the body of the device using ${V}_{\text {side}}$. This high level of tunability allows electronic control of ${V}_{t}$ and drive current for variable temperature operation in a wide temperature range with extremely low leakage currents (<10−13 A). [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 69
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 158517526
- Full Text :
- https://doi.org/10.1109/TED.2022.3184906