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Formation of misfit dislocation arrays and helium nanochannels near copper surface assisted by high-temperature graphene deposition.
- Source :
-
Acta Materialia . Sep2022, Vol. 237, pN.PAG-N.PAG. 1p. - Publication Year :
- 2022
-
Abstract
- Misfit dislocation arrays (MDAs) at semi-coherent heterogeneous interface have been demonstrated effectiveness to trap and then outgas helium (He) for alleviating void swelling in metals, but limited by atomic-level thin film deposition that is difficult to scale-up for industrial production. In this work, we proposed an innovative strategy that could generate semi-coherent homophase interfaces in a same grain by varying surface energy density assisted by high-temperature graphene (Gr) deposition. This strategy transforms strain energy and surface energy, two originally distinctive processes into successive processes, and demonstrates experimentally and theoretically by introducing {111} copper (Cu) in a {100} Cu grain. Subsequent He implantation and electrical resistivity measurement results suggest that high-density MDAs originated at this {111}/{100} interface could form stable He nanochannels near Cu surface with Gr assistance, manifesting by ultra-low increased ratio of the electrical resistivity (i.e. ∼3800% of Cu vs. ∼90% of Gr/Cu) after He implantation. The present findings may provide a new strategy for efficiently managing He and achieving surface protection of advanced metals, merely by depositing a super-rigid material on metal surface to greatly reduce surface energy density. [Display omitted] [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 13596454
- Volume :
- 237
- Database :
- Academic Search Index
- Journal :
- Acta Materialia
- Publication Type :
- Academic Journal
- Accession number :
- 158443740
- Full Text :
- https://doi.org/10.1016/j.actamat.2022.118134