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Growth and Ferroelectric Characterization of Cerium-Modified Bismuth Titanate Thin Film Deposited on GaN Substrate by Pulsed Laser Deposition.
- Source :
-
Integrated Ferroelectrics . 2004, Vol. 66 Issue 1, p253-260. 8p. - Publication Year :
- 2004
-
Abstract
- Cerium-modified Bi4Ti3O12 thin films were deposited on GaN substrates by the pulsed laser deposition method. The substrate temperature was varied from 600°C to 750°C in 50°C steps. The surface topographies and orientations of the Bi0.4Ce0.6Ti3O12 (BCeT) films were gradually changed in proportion to the substrate temperature. The diffusion reaction between BCeT and the GaN layer and the depth profiles of the films were investigated by Auger electron spectroscopy (AES), The ferroelectric properties and leakage current characteristics of the metal-ferroelectric-GaN stacked thin films were measured and discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10584587
- Volume :
- 66
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Integrated Ferroelectrics
- Publication Type :
- Academic Journal
- Accession number :
- 15812054
- Full Text :
- https://doi.org/10.1080/10584580490895554