Cite
Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling.
MLA
Ramesh, S., et al. “Understanding the Factors Affecting Contact Resistance in Nanowire Field Effect Transistors (NWFETs) to Improve Nanoscale Contacts for Future Scaling.” Journal of Applied Physics, vol. 132, no. 2, July 2022, pp. 1–14. EBSCOhost, https://doi.org/10.1063/5.0092535.
APA
Ramesh, S., Ivanov, T., Sibaja-Hernandez, A., Alian, A., Camerotto, E., Milenin, A., Pinna, N., El Kazzi, S., Lin, D., Lagrain, P., Favia, P., Bender, H., Collaert, N., & De Meyer, K. (2022). Understanding the factors affecting contact resistance in nanowire field effect transistors (NWFETs) to improve nanoscale contacts for future scaling. Journal of Applied Physics, 132(2), 1–14. https://doi.org/10.1063/5.0092535
Chicago
Ramesh, S., Ts. Ivanov, A. Sibaja-Hernandez, A. Alian, E. Camerotto, A. Milenin, N. Pinna, et al. 2022. “Understanding the Factors Affecting Contact Resistance in Nanowire Field Effect Transistors (NWFETs) to Improve Nanoscale Contacts for Future Scaling.” Journal of Applied Physics 132 (2): 1–14. doi:10.1063/5.0092535.