Chemical element distribution of cadmium sulfide obtained on silicon substrate.

The injection photodiode based on n+CdS-nCdS-nSi and n+CdS-nCdS-pSi structures was created and the distribution of chemical elements of these structures was studied. It was shown that when a cadmium sulfide film is deposited on the silicon surface, an intermediate layer is formed between the silicon and cadmium sulfide, which helps smooth out the difference between the crystal lattice constants of silicon and cadmium sulfide. It was proved by electron Auger spectroscopy that all obtained cadmium sulfide films have n-type conductivity. [ABSTRACT FROM AUTHOR]