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Comparative Analysis of the Electroluminescence Efficiency in Type-I and Type-II Heterostructures Based on III–V Narrow-Gap Compounds.
- Source :
-
Semiconductors . Feb2022, Vol. 56 Issue 2, p43-49. 7p. - Publication Year :
- 2022
-
Abstract
- We study in detail the mechanisms of radiative and Auger recombination in type-I and type-II heterostructures based on III–V narrow-gap materials. The presence of a heterointerface fundamentally changes the nature of these recombination processes with respect to the bulk material differently, depending on the type of heterojunction. Studying the electroluminescence of type-I and type-II light-emitting diode (LED) heterostructures based on InAsSb/InAs(Sb,P) quantum wells is presented. An increase in the relative efficiency of radiative recombination in the type-II heterostructure due to the suppression of Auger recombination favors the formation of intense stimulated emission in such heterostructures at low temperatures (4.2–70 K). [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10637826
- Volume :
- 56
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 157463162
- Full Text :
- https://doi.org/10.1134/S1063782622010043