Surface recombination property of silicon wafers determined accurately by self-normalized photocarrier radiometry.

• The surface recombination velocities of silicon wafers can be accurately determined due to the improved measurement sensitivity. • No independent measurement of the instrumental frequency response is required. • The proposed method can be further used to the quick and accurate characterization the surface passivation quality of silicon wafers. Surface recombination has a great impact on the performance of solar cells and photodetectors, and thus is necessary to be accurately determined. In this paper, a self-normalized photocarrier radiometry (PCR) with mean square variance graph is employed to improve the determination accuracy of the surface recombination velocities of silicon wafers and to reduce the influence of initial values on multi-parameter estimations. In this method data obtained from both the illuminated front surface and the illuminated rear surface are employed. The uncertainties of the estimated carrier recombination parameters, especially for the surface recombination velocities are improved significantly. Moreover, the influence of instrumental frequency response (IFR) on the multi-parameter estimation is totally eliminated. Theoretical simulations and experiments are performed to confirm the theoretical predictions. The estimated average uncertainties of the front and back surface recombination velocities for the sample used are approximately ± 7.60% and ± 5.71% by the proposed method, which are much improved than ± 13.65% and >±50% by the conventional method. [ABSTRACT FROM AUTHOR]