Cite
Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate.
MLA
Xu, Buqing, et al. “Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate.” Materials (1996-1944), vol. 15, no. 10, May 2022, p. 3594. EBSCOhost, https://doi.org/10.3390/ma15103594.
APA
Xu, B., Du, Y., Wang, G., Xiong, W., Kong, Z., Zhao, X., Miao, Y., Wang, Y., Lin, H., Su, J., Li, B., Wu, Y., & Radamson, H. H. (2022). Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate. Materials (1996-1944), 15(10), 3594. https://doi.org/10.3390/ma15103594
Chicago
Xu, Buqing, Yong Du, Guilei Wang, Wenjuan Xiong, Zhenzhen Kong, Xuewei Zhao, Yuanhao Miao, et al. 2022. “Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate.” Materials (1996-1944) 15 (10): 3594. doi:10.3390/ma15103594.