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Reliable resistive switching and synaptic plasticity in Ar+-irradiated single-crystalline LiNbO3 memristor.
Reliable resistive switching and synaptic plasticity in Ar+-irradiated single-crystalline LiNbO3 memristor.
- Source :
-
Applied Surface Science . Sep2022, Vol. 596, pN.PAG-N.PAG. 1p. - Publication Year :
- 2022
-
Abstract
- [Display omitted] • A V o reservoir is introduced on single-crystalline LiNbO 3 film by Ar+ irradiation. • Reliable resistive switching with low temporal and spatial variations is realized. • Abundant synaptic functions included short- and long-term plasticity are emulated. • Residual-channel-guided channel reconstruction enhances the switching uniformity. Typical filament-type memristors suffer from temporal and spatial variations in the resistive switching due to stochastic filament formation, which hinders the implementation of memristive synapses in neuromorphic computing. In this work, the memristor based on Ar+-irradiated single-crystalline LiNbO 3 (SC-LNO) thin film is reported. The high-quality SC-LNO thin films contribute to the formation of more concentrated and robust oxygen vacancy channels (OVCs) and lead to reliable self-rectifying resistive switching behaviors with an ultra-low device-to-device variability of ∼2.80% and cycle-to-cycle variability of ∼2.25%, as well as long retention time at multilevel resistance states (>3 × 104 s), stable endurance performance (>105 cycles), excellent environmental stability (>6 months), and good analog switching linearity. Furthermore, abundant synaptic plasticity characteristics including paired-pulse facilitation (PPF), post-tetanic potentiation (PTP), long-term potentiation (LTP), long-term depression (LTD), spike-timing-dependent plasticity (STDP), and associative learning, are also successfully emulated using this device as an electronic synapse. The spontaneous decay process right after applied voltage pulses and the long-term nonvolatility characteristics in Ar+-irradiated SC-LNO memristor indicate the existence of residual OVCs, which serves to guide the reconstruction of OVCs during repeated switching and to further enhances the uniformity of device switching characteristics. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 596
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 157119401
- Full Text :
- https://doi.org/10.1016/j.apsusc.2022.153653