Room-temperature co-regulation of resistive and magnetic states in Fe3O4/PZT/ZCO multiferroic heterostructure with diluted magnetic semiconductor.

• Successful preparation of Fe 3 O 4 /PbZr 0.2 Ti 0.8 O 3 /Zn 0.95 Co 0.05 O multiferroic heterostructure. • Magnetic and resistive states of heterostructure are synchronously regulated by polarization bias at room temperature. • Significant enhancement of room-temperature magnetoelectric coupling effect is achieved in multiferroic heterostructure. • Fe 3 O 4 /PbZr 0.2 Ti 0.8 O 3 /Zn 0.95 Co 0.05 O multiferroic heterostructure presents four distinct magnetoresistances. A novel multiferroic heterostructure composed of Fe 3 O 4 /PbZr 0.2 Ti 0.8 O 3 (PZT)/Zn 0.95 Co 0.05 O(ZCO) is prepared on the Pt(1 1 1)-Ti-SiO 2 -Si substrate in this work to achieve the synchronous electric regulation on magnetic and resistive states at room temperature. When the polarization direction of the PZT layer is reversed with the write voltage, the depletion or accumulation of oxygen vacancies is formed at the PZT/ZCO interface, exhibiting the resistance switching between high and low resistive states with a ratio up to 1.19 × 104. Meanwhile, based on the interfacial charge effect and bound magnetopolaron (BMP) theory, magnetic modulation with a magnetoelectric (ME) coupling coefficient up to 133.2 Oe/V is realized at room temperature. More interestingly, by measuring the magnetoresistance, four distinct resistance states are displayed in this multiferroic structure with the ferroelectric reversal. Our results show that the multiferroic system containing both ferromagnetic and diluted magnetic semiconductor can simultaneously realize magnetoelectric coupling and resistance switching at room temperature. The magnetic signal can also be converted into an electrical signal based on the magnetoresistance effect. [ABSTRACT FROM AUTHOR]