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Magnetic regulation in the off-stoichiometric L10-MnGa thin film by Fe doping.

Authors :
Zhang, Yumei
Xu, Hongda
Li, Hongyang
Tan, Shanshan
Zhao, Qing
Du, Changxin
Li, Haibo
Source :
Journal of Alloys & Compounds. Jun2022, Vol. 907, pN.PAG-N.PAG. 1p.
Publication Year :
2022

Abstract

• High (001) orientation in the off-stoichiometric L 1 0 -MnGa thin film by Fe doping was obtained. • The appropriate Fe doping can improve H c and K u eff, then decrease M s of the MnGa film. • (BH) max can reach to 9.21 MGOe. • Our research provides a new inspiration for the design and application of L 1 0 -MnGa film. M s and K u eff of Fe-doped L 1 0 -MnGa film as functions of Fe compositions and (b) cross-sectional HRTEM image of 6.8% Fe-doped L 1 0 -MnGa film [Display omitted] L 1 0 -MnGa alloy film is a kind of promising material for application of spintronics device and permanent magnet. In this paper, we prepare the Fe-doped L 1 0 -MnGa films on thermal MgO (100) substrates with different annealing temperatures and report magnetic regulation of the off-stoichiometric L 1 0 -MnGa thin film by tuning Fe doping amount and annealing temperature. It is found that the 4.6% Fe-doped L 1 0 -MnGa film has (001) orientation, large coercivity of 6.14 kOe, high effective anisotropy constant of 9.9 Merg/cc and low saturation magnetization of 482 emu/cc. The film annealed at 500 °C has a maximum magnetic energy product of 9.21 MGOe. The production of tensile strain and the change of interatomic exchange coupling state by Fe doping and annealing temperature enable the L 1 0 -MnGa film to apply in many fields. It is noteworthy that there are the different doping results compared to the Pt-doped L 1 0 -MnGa film in the previous work. These research results are valuable for the design and application of L 1 0 -MnGa film. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09258388
Volume :
907
Database :
Academic Search Index
Journal :
Journal of Alloys & Compounds
Publication Type :
Academic Journal
Accession number :
156506247
Full Text :
https://doi.org/10.1016/j.jallcom.2022.164391