A Skyrmion Diode Based on Skyrmion Hall Effect.

The skyrmion Hall effect (SkHE) is usually considered as a drawback in technological applications based on magnetic skyrmion and much effort has been made to suppress the SkHE. Instead, here we demonstrate that the SkHE can be used to design a useful skyrmion diode. Micromagnetic simulations show that, in a stripe-shaped device with a lateral asymmetry, diode-like forward breakover and reverse cutoff functions can be realized based on the current-induced motion of skyrmion. Our results may suggest a promising pathway toward the development of spintronic devices based on unidirectional skyrmion transport. [ABSTRACT FROM AUTHOR]