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Unveiling the parasitic electron channel under the gate of enhancement-mode p-channel GaN field-effect transistors on the p-GaN/AlGaN/GaN platform.
- Source :
-
Applied Physics Letters . 4/14/2022, Vol. 120 Issue 15, p1-5. 5p. - Publication Year :
- 2022
-
Abstract
- Enhancement-mode (E-mode) p-channel gallium nitride (GaN) field-effect transistors (p-FETs) are essential components for GaN-based complementary logic circuits. For the ease of integration with n-FETs, they could be fabricated on the commercial p-GaN gate high-electron-mobility-transistor (HEMT) platform, on which the two-dimensional electron gas at the AlGaN/GaN hetero-interface is completely depleted in as-grown epi-structures. However, under the gated region where p-GaN is recessed and depleted at thermal equilibrium, a parasitic electron channel (PEC) could appear at the AlGaN/GaN interface. This Letter reports experimental investigations on the PEC with specifically designed structures, confirming that the PEC does exist but imposes limited impacts on electrical characteristics of p-FETs. When connected with an external contact, the PEC could act as a back gate to modulate the overlaying p-channel. If isolated from external contacts, which is the case of p-FETs under normal operations, electrons in the PEC would redistribute under the active region of p-FETs in the horizontal direction (i.e., parallel to the surface) under different biases but are mostly confined near the AlGaN/GaN interface in the vertical direction (i.e., perpendicular to the surface). [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 120
- Issue :
- 15
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 156341104
- Full Text :
- https://doi.org/10.1063/5.0086954