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Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device.
- Source :
-
Materials (1996-1944) . Apr2022, Vol. 15 Issue 7, p2402-2402. 8p. - Publication Year :
- 2022
-
Abstract
- TiN/AlOx:Ti/TaOx/TiN memory devices using bilayer resistive switching memory demonstrated excellent durability and capability of QLC (quad-level cell) memory devices. The best nonvolatile memory characteristics with the lowest operation current and optimized 4 bit/cell states were obtained using the Incremental Step Pulse Programming (ISPP) algorithm in array. As a result, a superior QLC reliability (cycle endurance > 1 k at each level of the QLC, data retention > 2 h at 125 °C) for all the 4 bits/cell operations was achieved in sub-μm scaled RRAM (resistive random access memory) devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 15
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Materials (1996-1944)
- Publication Type :
- Academic Journal
- Accession number :
- 156325369
- Full Text :
- https://doi.org/10.3390/ma15072402