Molecular Layering of Oxide Nanostructures on the Surface of Metal Matrices.

The generalized results of studying the processes of the formation of nanolayers of silicon, tantalum, aluminum, and chromium oxides obtained by the method of molecular layering (atomic layer deposition) on the surface of metal matrices—tantalum, aluminum and chromium—are presented. The conditions for the layer mechanism of the formation of oxide nanostructures are determined. Their dielectric characteristics are assessed. [ABSTRACT FROM AUTHOR]